CMLM7387 multi discrete module ? surface mount n-channel mosfet and low noise pnp transistor description: the central semiconductor CMLM7387 is a multi discrete module ? consisting of a single n-channel enhancement-mode mosfet and a low noise pnp transistor packaged in a space saving picomini? sot-563 surface mount case. this device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. marking code: 7c7 maximum ratings (sot-563 package): (t a =25c) symbol units power dissipation (note 1) p d 350 mw power dissipation (note 2) p d 300 mw power dissipation (note 3) p d 150 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w maximum ratings q1: (t a =25c) symbol units drain-source voltage v ds 50 v gate-source voltage v gs 12 v continuous drain current i d 160 ma maximum pulsed drain current i dm 560 ma maximum ratings q2: (t a =25c) symbol units collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5.0 v collector current i c 100 ma electrical characteristics q1: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf, i gssr v gs =8.0v, v ds =0v 1.0 a i gssf, i gssr v gs =12v, v ds =0v 5.0 a i dss v ds =50v, v gs =0v 10 a bv dss v gs =0v, i d =250a 50 v v gs(th) v ds =v gs , i d =250a 0.7 1.0 v r ds(on) v gs =4.0v, i d =100ma 4.0 r ds(on) v gs =2.5v, i d =80ma 5.0 g fs v ds =10v, i d =100ma 180 ms features: ? esd protection up to 2kv ? low r ds(on) mosfet ? low v ce(sat) pnp transistor applications: ? dc / dc converters ? battery powered portable equipment notes: (1) ceramic or aluminum core pc board with copper mounting pad area of 4.0 mm 2 (2) fr-4 epoxy pc board with copper mounting pad area of 4.0 mm 2 (3) fr-4 epoxy pc board with copper mounting pad area of 1.4 mm 2 ? devices are halogen free by design sot-563 case tm r0 (1-december 2009) www.centralsemi.com
CMLM7387 multi discrete module ? surface mount n-channel mosfet and low noise pnp transistor electrical characteristics q1 - c ontinued: symbol test conditions min typ max units c rss v ds =10v, v gs =0, f=1.0mhz 2.1 pf c iss v ds =10v, v gs =0, f=1.0mhz 25 pf c oss v ds =10v, v gs =0, f=1.0mhz 5.0 pf electrical characteristics q2: (t a =25c) i cbo v cb = 30v 15 na bv cbo i c = 10a 50 v bv ceo i c = 10ma 45 v bv ebo i e = 1.0a 5.0 v v ce(sat) i c = 10ma, i b = 0.5ma 100 mv v ce(sat) i c = 100ma, i b = 5.0ma 400 mv v be(sat) i c = 10ma, i b = 0.5ma 700 mv v be(sat) i c = 100ma, i b = 5.0ma 900 mv v be(on) v ce = 5.0v, i c = 2.0ma 600 750 mv v be(on) v ce = 5.0v, i c = 10ma 820 mv h fe v ce = 5.0v, i c = 2.0ma 220 475 f t v ce = 5.0v, i c =10ma, f=100mhz 100 mhz c ob v cb = 10v, i e =0, f=1.0mhz 4.5 pf nf v ce = 5.0v, i c =0.2ma, r s =2k f=1.0khz, bw=200hz 10 db sot-563 - mechanical outline lead code: 1) source q1 2) gate q1 3) collector q2 4) emitter q2 5) base q2 6) drain q1 marking code: 7c7 www.centralsemi.com r0 (1-december 2009)
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